? 2005 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 2.5 5.0 v i ces v ce = v ces t j = 25 c1 a v ge = 0 v t j = 125 c 200 a i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) v ge = 15v, i c = 50 a 1.30 1.50 v t j = 125 c 1.31 v i c = 100 a 1.63 1.80 v t j = 125 c 1.77 v polar tm igbt with anti-parallel diode for pdp applications symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c, igbt chip capability 100 a i c90 t c = 90 c75a i cm t j 150 c, tp < 300 s 188 a i c(rms) lead current limit 75 a ssoa v ge = 15 v, t vj = 150 c, r g = 20 ? i cm = 100 a (rbsoa) clamped inductive load, v ce < 600 v p c t c = 25 c 340 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s m d mounting torque 1.3/10 nm/lb.in. weight to-247 6.0 g ds99405(05/05) features ? international standard package ? low v ce(sat) - for minimum on-state conduction losses ? mos gate turn-on - drive simplicity applications ? pdp screen drivers ? ac motor speed control ? dc servo and robot drives ? dc choppers ? uninterruptible power supplies (ups) ? switch-mode and resonant-mode power supplies ? capacitor discharge ixgq 100n60pbd1 v ces = 600 v i c25 = 100 a advance technical information to-3p (ixtq) g d s (tab)
ixys reserves the right to change limits, test conditions, and dimensions. IXGQ100N60PBD1 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 50 a v ce = 10 v 32 48 s pulse test, t 300 s, duty cycle 2 % c ies 2500 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 190 pf c res 69 pf q g 160 nc q ge i c = 50 a, v ge = 15 v, v ce = 0.5 v ces 24 nc q gc 93 nc t d(on) 45 ns t ri 142 ns t d(off) 147 ns t fi 217 ns t d(on) 41 ns t ri 148 ns t d(off) 153 ns t fi 363 ns r thjc 0.37 k/w r thck 0.25 k/w resistive load, t j = 25 c i c = 50 a, v ge = 15 v v ce = 480 v, r g = r off = 5 ? inductive load, t j = 125 c i c = 50 a, v ge = 15 v v ce = 480 v, r g = r off = 5 ? ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 to-3p (ixtq) outline reverse diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = 20 a, v ge = 0 v 2.0 v r thjc 2.5 k/w
? 2005 ixys all rights reserved IXGQ100N60PBD1 fig. 2. extended output characteristics @ 25 o c 0 50 100 150 200 250 300 350 012345678910 v c e - volts i c - amperes v ge = 15v 13v 9v 11v 7v fig. 3. output characteristics @ 125 o c 0 10 20 30 40 50 60 70 80 90 100 0 0.4 0.8 1.2 1.6 2 2.4 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 1. output characteristics @ 25 o c 0 10 20 30 40 50 60 70 80 90 100 0 0.4 0.8 1.2 1.6 2 2.4 v c e - volts i c - amperes v ge = 15v 13v 11v 9v 7v fig. 4. dependence of v ce( sat ) on temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v c e ( sat ) - normalized i c = 100a i c = 50a v ge = 15v i c = 200a fig. 5. collector-to-em itter voltage vs. gate-to-emitter voltage 0 1 2 3 4 5 6 7 8 7 8 9 10 111213 1415 1617 v g e - volts v c e - volts t j = 25 o c i c = 200a 100a 50a fig. 6. input adm ittance 0 25 50 75 100 125 150 175 200 225 250 4567891011 v g e - volts i c - amperes t j = 125 o c 25 o c -40 o c
ixys reserves the right to change limits, test conditions, and dimensions. IXGQ100N60PBD1 fig. 7. transconductance 0 10 20 30 40 50 60 70 0 25 50 75 100 125 150 175 200 225 250 i c - amperes g f s - siemens t j = -40 o c 25 o c 125 o c fig. 10. resistive turn-on rise tim e vs. gate resistance 50 1 00 1 50 200 250 300 350 400 450 4 6 8 10 12 14 16 18 20 r g - ohms t r - nanoseconds t j = 125 o c v ge = 15v v ce = 480v i c = 100a i c = 200a i c = 50a fig. 11. resistive turn-on delay tim e vs. gate resistance 35 40 45 50 55 60 4 6 8 101214161820 r g - ohms t d ( o n ) - nanoseconds t j = 125 o c v ge = 15v v ce = 480v i c = 200a 100a 50a fig. 9. resistive turn-on rise time vs. collector current 50 100 150 200 250 300 350 50 75 100 125 150 175 200 i c - amperes t r - nanoseconds r g = 5 ? v ge = 15v v ce = 480v 25 o c < t j < 125 o c fig. 8. resistive turn-on rise time vs. junction temperature 50 100 150 200 250 300 350 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 5 ? v ge = 15v v ce = 480v i c = 200a i c = 50a i c = 100a fig. 12. resistive turn-off sw itching time vs. junction temperature 10 0 15 0 200 250 300 350 400 450 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade switching time - nanoseconds t d(off) , t f - - - - - r g = 5 ? , v ge = 15v v ce = 480v i c = 200a 100a 50a
? 2005 ixys all rights reserved IXGQ100N60PBD1 fig. 16. gate charge 0 3 6 9 12 15 0 20406080100120140160 q g - nanocoulombs v g e - volts v ce = 300v i c = 100a i g = 10ma fig. 17. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v c e - volts capacitance - p f c ies c oes c res f = 1 mhz fig. 14. resistive turn-off sw itching tim e vs. gate re sis tance 50 100 150 200 250 300 350 400 450 500 4 6 8 101214 161820 r g - ohms switching time - nanoseconds t d( off) , t f - - - - - t j = 1 25 o c, v ge = 15v v ce = 480v i c = 200a , 100a , 50a fig. 15. reverse-bias safe operating area 0 20 40 60 80 100 120 140 160 180 100 200 300 400 500 600 700 v c e - volts i c - amperes t j = 150 o c r g = 20 ? dv/dt < 10v/ns fig. 13. resistive turn-off switching tim e vs. collector current 50 10 0 15 0 200 250 300 350 400 450 500 5 0 8 0 110 14 0 17 0 2 0 0 i c - amperes switching time - nanoseconds t j = 125 o c t d( off) , t f - - - - r g = 5 ? , v ge = 15v, v ce = 480v t j = 25 o c 25 o c < t j < 125 o c fig. 18. maxim um transient therm al resistance 0 0 1 0.1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - oc / w
ixys reserves the right to change limits, test conditions, and dimensions. IXGQ100N60PBD1 i f = 60a i f = 30a i f = 15a t vj = 100c v r = 300v t vj = 100c i f = 30a fig. 21. peak reverse current i rm versus -di f /dt fig. 20. reverse recovery charge q r versus -di f /dt fig. 19. forward current i f versus v f t vj = 100c v r = 300v t vj = 100c v r = 300v i f = 60a i f = 30a i f = 15a q r i rm fig. 20. dynamic parameters q r , i rm versus t vj fig. 23. recovery time t rr versus -di f /dt fig. 24. peak forward voltage v fr and t fr versus di f /dt i f = 60a i f = 30a i f = 15a t fr v fr fig. 25. transient thermal resistance junction to case constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.502 0.0052 2 0.193 0.0003 3 0.205 0.0162 t vj =25c t vj =100c t vj =150c fig. 22. dynamic parameters q r , i rm versus t vj 200 600 1000 0 400 800 60 70 80 90 0.00001 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 5 10 15 20 0.00 0.25 0.50 0.75 1.00 v fr di f /dt v 200 600 1000 0 400 800 0 5 10 15 20 25 30 100 1000 0 200 400 600 800 1000 0123 0 10 20 30 40 50 60 i rm q r i f a v f -di f /dt -di f /dt a/ s a v nc a/ s a/ s t rr ns t fr z thjc a/ s s dsep 29-06
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